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| Transistors 2SC5472 Silicon NPN epitaxial planer type Unit: mm (0.425) For low-voltage low-noise high-frequency oscillation I Features * High transition frequency fT * High gain of 8.2 dB and low noise of 1.8 dB at 3 V * Optimum for RF amplification of a portable telephone and pager * S-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.3+0.1 -0.0 3 0.15+0.10 -0.05 1.250.10 2.10.1 5 1 2 0.20.1 0 to 0.1 0.90.1 0.9+0.2 -0.1 (0.65) (0.65) 1.30.1 2.00.2 10 I Absolute Maximum Ratings Ta = 25C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 9 6 1 30 150 150 -55 to +150 Unit V V V mA mW C C 1: Base 2: Emitter 3: Collector EIAJ: SC-70 S-Mini Type Package Marking Symbol: 3A I Electrical Characteristics Ta = 25C 3C Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Transition frequency Collector output capacitance Forward transfer gain Noise figure Symbol ICBO IEBO hFE fT Cob | S21e NF |2 Conditions VCB = 9 V, IE = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 10 mA VCE = 3 V, IC = 10 mA, f = 2 GHz VCB = 3 V, IE = 0, f = 1 MHz VCE = 3 V, IC = 10 mA, f = 2 GHz VCE = 3 V, IC = 3 mA, f = 1.5 GHz 6.0 80 12.0 0.6 8.0 1.8 3.0 0.9 Min Typ Max 1 1 200 GHz pF dB dB Unit A A 1 2SC5472 hFE IC 240 Transistors f T IC 14 12 VCE = 3 V 10 | S21e | 2 IC VCE = 3 V f = 2 GHz Transition frequency fT (GHz) 200 Forward transfer gain | S21e | 2 (dB) Forward current transfer ratio hFE 8 160 Ta = 75C 25C -25C 10 8 6 4 2 0 6 120 4 80 40 2 0 0.1 0.3 1 3 10 30 100 0 1 3 10 30 100 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) Collector current IC (mA) NF IC 5 VCE = 3 V f = 1.5 GHz 4 Noise figure NF (dB) 3 2 1 0 0.1 0.3 1 3 10 Collector current IC (mA) 2 |
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